The NAND Flash divides the number of levels in a memory cell (that is, stores several bits of data), and can divide the product into SLC (Single-Level Cell), MLC (Multi-Level Cell), and TLC (Trinary-Level Cell). The more partition levels, the greater the storage density, and the corresponding area of the wafer can produce a larger capacity product. For a single chip, the same capacity of NAND Flash, MLC and TLC have absolute price advantage, but also Sacrificed part of the performance.